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Low Temperature Polysilicon Materials and Devices

Published online by Cambridge University Press:  10 February 2011

D. Pribat ,
P. Legagneux ,
F. Plais ,
C. Reita ,
F. Petinot  and
O. Huet
D. Pribat
Affiliation:
Thomson CSF, LCR, Domaine de Corbeville, 91404, Orsay, France.
P. Legagneux
Affiliation:
Thomson CSF, LCR, Domaine de Corbeville, 91404, Orsay, France.
F. Plais
Affiliation:
Thomson CSF, LCR, Domaine de Corbeville, 91404, Orsay, France.
C. Reita
Affiliation:
Thomson CSF, LCR, Domaine de Corbeville, 91404, Orsay, France.
F. Petinot
Affiliation:
Thomson CSF, LCR, Domaine de Corbeville, 91404, Orsay, France.
O. Huet
Affiliation:
Thomson CSF, LCR, Domaine de Corbeville, 91404, Orsay, France.
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Abstract

In this paper, we essentially discuss the material aspects of low temperature (≤ 600 °C) polysilicon technologies. Emphasis is put on the properties of polysilicon films, depending on the way they are obtained. Solid phase crystallisation as well as pulsed laser crystallisation processes are presented in some detail, together with thin film transistor characteristics. Although not yet stabilised and despite uniformity and reproducibility problems, laser crystallisation will probably end up being the technology of choice for the manufacture of large area electronics products, because it allows the fabrication of devices exhibiting superior properties, with a reduced thermal budget.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 127
Copyright
Copyright © Materials Research Society 1997

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