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Low Temperature Si Oxidation with Excimer Lamp Sources

Published online by Cambridge University Press:  10 February 2011

Ian W. Boyd and
Jun-Ying Zhang
Ian W. Boyd
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK
Jun-Ying Zhang
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK
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Abstract

The principles of vacuum ultraviolet (VUV) and ultraviolet (UV) light generated from a new type of excimer lamp are described. Direct photo-oxidation of silicon at a temperature of 250°C has been investigated using a Xe2* excimer lamp operating at a wavelength of 172 nm. The induced reaction rate of 0.1 nm/min is 90 times greater than thermal oxidation at 612°C. Results will be compared to those previously obtained by a low pressure mercury lamp and conventional furnace oxidation. Ozone plays an extremely important role in the reaction enhancement which was found to be strongly dependent upon oxygen pressure with the highest rates being achievable below 10 mbar. Ellipsometry, Fourier transform infrared spectroscopy, capacitance-voltage, and current-voltage measurements have been employed to characterise the oxide films grown and indicate them to be high quality layers. The electrical properties of the as-grown films have been improved significantly by applying an additional UV/O3 annealing step. A simple model explaining the observed reduction in the leakage current after UV annealing is proposed whilst the current conduction mechanism within the films is discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997, 343
Copyright
Copyright © Materials Research Society 1997

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References

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