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Low-Dielectric-Constant Interlayer Insulation for Multilevel Metallization

Published online by Cambridge University Press:  22 February 2011

Masahiko Maeda
Masahiko Maeda*
Affiliation:
NTT LSI Laboratories, 3–1 Morinosato, Wakamiya, Atsugi-Shi, Kanagawa, 243–01 JAPAN.
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Abstract

SiBN ternary and SiOBN quaternary films prepared by rf-plasma and/or ECR-plasma CVD have been proposed, and this paper evaluates the relationship between film structure and dielectric constant as well as the other film properties. The SiBN films contain Si-N and B-N bonds, and the dielectric constant of the SiBN films reduces with increasing proportion of B-N bonds in the films. The SiBN films are less hygroscopic than BN films and they are therefore more stable. For the SiOBN films, the effects of oxygen doping on the dielectric constant and on breakdown strength are discussed in terms of the film composition and bonding configuration. The dielectric constant decreases with increasing oxygen atomic ratio and reaches a minimum when the amount of oxygen is equal to the amount of silicon. The effectiveness of this low-dielectric-constant material as an interlay-er is confirmed in actual VLSIs with planarized two-level metallization using the SiBN interlayer.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992, 457
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Horiguchi, S., Suzuki, M., Ichino, H., Konaka, S., and Sakai, T., Dig. Tech. Papers ISSCC, p. 198 (1985).Google Scholar
2 Maeda, M. and Makino, T., Jpn. J. Appl. Phys., 26, 660 (1987).Google Scholar
3 Miyanaga, M., Konaka, S., Yamamoto, Y., and Sakai, T., Extended Abstracts 16th SSDM (Kobe, Japan), p. 225 (1984).Google Scholar
4 Maeda, M., Makino, T., and Konaka, S., Dig. Tech. Papers of Symp. VLSI Technol. (IEEE Service Center Single Publication Sales Unit, NJ), p. 93 (1988).Google Scholar
5 Maeda, M., Makino, T., Yamamoto, E., and Konaka, S., IEEE Trans. Electron Devices, 36, 1610 (1989).Google Scholar
6 Maeda, M., Jpn. J. Appl. Phys., 29, 1789 (1990).Google Scholar
7 Colthup, N.B., Daly, L.H., and Wiberley, S.E., Introduction to Infrared and Raman Spectroscopy, 2nd ed. (Academic, New York, 1975).Google Scholar
8 Baronian, W., Mater. Res. Bull., 7, 119 (1972).Google Scholar
9 Lanford, W.A. and Rand, M.J., J. Appl. Phys., 49, 2473 (1978).Google Scholar
10 Takahashi, M., Maeda, M., and Sakakibara, Y., Jpn. J. Appl. Phys., 26, 1606 (1987).Google Scholar
11 Chow, R., Lanford, W.A., Ke-Ming, W., and Rand, M.J., J. Appl. Phys., 53, 5630 (1982).Google Scholar
12 Maeda, M. and Nakamura, H., J. Appl. Phys., 55, 3068 (1984).Google Scholar
13 Hyder, S.B. and Yep, T.O., J. Electrochem. Soc., 123, 1721 (1976).Google Scholar
14 Bath, A., Lepley, B., Put, Van der, and Schoonman, J., Appl. Surf. Sci., 39, 135 (1989).Google Scholar
15 Makino, T. and Maeda, M., Jpn. J. Appl. Phys., 25, 1300 (1986).Google Scholar
16 Sano, M. and Aoki, H., Thin Solid Films, 83, 247 (1981).Google Scholar
17 Motojima, S., Tamura, Y., and Sugiyama, K., Thin Solid Films, 88, 269 (1982).Google Scholar
18 Matsuda, T., Uno, N., Matsunami, Y., Nakae, H., and Hirai, T., Proc. 5th Europian Conf. Chemical Vapor Deposition (Department of Chemistry, Uppsala University), Uppsara, June, p. 420 (1985).Google Scholar
19 Wittberg, T.N., Hoenigman, J.R., Moddeman, W.E., Cothern, C.R., and Gulett, M.R., J. Vac. Sci. Technol., 15, 348 (1978).Google Scholar
20 Handbook of X-Ray Photoelectron Spectroscopy, edited by Muilenberg, G.E. (Perkin-Elmer Corporation, 1979).Google Scholar
21 Konaka, S., Amemiya, Y., Sakuma, K., and Sakai, T., Extended Abstracts 19th SSDM (Tokyo, Japan), p. 331 (1987).Google Scholar
22 Suzuki, M., Hirata, M., and Konaka, S., Dig. Tech. Papers ISSCC, WPM7. 2 (1988).Google Scholar