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Low-power and Fast-switching Organic Field-effect Transistors with Ionic Liquids

Published online by Cambridge University Press:  01 February 2011

S. Ono,
S. Seki,
R. Hirahara,
Y. Tominari and
J. Takeya
S. Ono
Affiliation:
shimpei@criepi.denken.or.jp, CRIEPI, Materials Science Research Laboratory, Komae, Tokyo, 201-8511, Japan
S. Seki
Affiliation:
s-seki@criepi.denken.or.jp, CRIEPI, Materials Science Research Laboratory, Komae, Tokyo, 201-8511, Japan
R. Hirahara
Affiliation:
hirahara@chem.sci.osaka-u.ac.jp, Osaka University, Graduate Schools of Science, Machikaneyama, Toyonaka, 560-0043, Japan
Y. Tominari
Affiliation:
tominari@chem.sci.osaka-u.ac.jp, Osaka University, Graduate Schools of Science, Machikaneyama, Toyonaka, 560-0043, Japan
J. Takeya
Affiliation:
takeya@chem.sci.osaka-u.ac.jp, Osaka University, Graduate School of Science, 1-1, Machikaneyama, Toyonaka, 560-0043, Japan
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Abstract

We report high-mobility rubrene single-crystal field-effect transistors with ionic-liquid electrolytes used for gate dielectric layers. As the result of fast ionic diffusion to form electric double layers, their capacitances remain more than 10 μF/cm2 even at 0.1 MHz. With high carrier mobility of 1.2 cm2/Vs in the rubrene crystal, pronounced current amplification is achieved at the gate voltage of only 0.2 V, which is two orders of magnitude smaller than that necessary for organic thin-film transistors with dielectric gate insulators. The results demonstrate that the ionic-liquid/organic semiconductor interfaces are suited to realize low-power and fast-switching field-effect transistors without sacrificing carrier mobility in forming the solid/liquid interfaces.

Keywords

organicelectrical propertiesionic conductor

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References

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