Hostname: page-component-7b7567c8c-2n9c9 Total loading time: 0 Render date: 2026-11-14T01:54:41.790Z Has data issue: false hasContentIssue false
  • English
  • Français

Low-Temperature Device-Quality SiO2/Si (100) Interfaces Prepared By A Combined Remote Plasma Oxidation-Deposition Process

Published online by Cambridge University Press:  25 February 2011

T. Yasuda,
Y. Ma and
G. Lucovsky
T. Yasuda
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
Y. Ma
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
Get access

Abstract

Gate-quality SiO2/Si(100) interfaces were reproducibly fabricated using a two-step remote plasma-assisted oxidation/thin-film deposition processing sequence at temperatures between 200 and 300°C. The pre-deposition oxidation creates approximately 0.5nm of SiO2, and produces an SiO2/Si interface with a midgap trap density of ∼1.3×1010cm−2eV−1. The MOS capacitors prepared by this technique have properties comparable to those with thermal oxides grown at 850–1050°C. These capacitors also show a longer minority-carrier life time in the underlying Si than samples prepared using other pre-deposition treatment methods.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Batey, J. and Tierney, E., J. Appl. Phys. 60, 3136 (1986).Google Scholar
[2] Bright, A. A., Batey, J., and Tierney, E., Appl. Phys. Lett. 58, 619 (1991).Google Scholar
[3] Fountain, G. G., Rudder, R. A., Hattangady, S. V., Markunas, R. J., and Lindorme, P. S., J. Appl. Phys. 63, 4744 (1988).Google Scholar
[4] Kim, S. S., Stephens, D. J., Lucovsky, G., Fountain, G. G., and Markunas, R. J., J. Vac. Sci. Technol. A8, 2039 (1990).Google Scholar
[5] Yasuda, T., Ma, Y., Habermehl, S., Kim, S. S., Lucovsky, G., Schneider, T. P., Cho, J., and Nemanich, R. J., MRS Symp. Proc. 202, 395 (1991)Google Scholar
[6] Lucovsky, G., Tsu, D. V., Rudder, R. A., and Markunas, R. J., Thin Film Processes II, edited by Vossen, J. L. and Kern, W. (Academic Press, San Diego, 1991), p. 565.CrossRefGoogle Scholar
[7] Nicollian, E. H. and Brews, J. R., MOS (Metal Oxide Semiconductor) Physics and Technology(John Wiley & Sons, New York, 1982).Google Scholar
[8] Ma, Y., Yasuda, T. and Lucovsky, G., MRS Symp. Proc. 236 (1992) to be published.Google Scholar
[9] Yasuda, T., Ma, Y., Habermehl, S., and Lucovsky, G., Appl. Phys. Lett. (1992), to be published.Google Scholar
[10] Ma, Y., Yasuda, T., Bjorkman, C.H. and Lucovsky, G., J. Vac. Sci. Technol, A10 (1992) to be published.Google Scholar