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Low-Temperature PECVD SiO2 On Si And SiC

Published online by Cambridge University Press:  10 February 2011

L. Teng and
W. A. Anderson
L. Teng
Affiliation:
Department of Electrical and Computer Engineering State University of New York at Buffalo Amherst, NY 14260
W. A. Anderson
Affiliation:
Department of Electrical and Computer Engineering State University of New York at Buffalo Amherst, NY 14260
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Abstract

The deposition of SiO2 films by plasma-enhanced-chemical-vapor-deposition (PECVD) using tetraethylorthosilicate (TEOS) was studied. MOS capacitors were fabricated on both Si and SiC for this study. Several different sets of experiments were conducted for PECVD deposition according to different growth parameters and the results compared. For Si samples with SiO2 deposited at a substrate temperature 300°C, the C∼V curve gave a flat-band voltage of 1V and a transition slope of 112 pF/V. The dielectric constant of the deposited SiO2 film was 4.2 and the Si/SiO2 interface trap density was calculated to be 1.8×1010 cm−2. The I-V curve showed a leakage current density of l.2×10−9 A/cm2 and dielectric breakdown field strength of 9.2 MV/cm. For SiC samples, the PECVD deposition gave a uniform SiO2 film with a controllable deposition rate of 0.3nm/sec. The refractive index and dielectric constant of the as-deposited SiO2 film were 1.46 and 3.84 respectively. The I∼V curve showed a leakage current density of 2×10−9 A/cm2 and a breakdown field of 4.7 MV/cm.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997, 147
Copyright
Copyright © Materials Research Society 1998

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