Hostname: page-component-7b7567c8c-fvjsw Total loading time: 0 Render date: 2026-11-14T22:31:51.278Z Has data issue: false hasContentIssue false
  • English
  • Français

Manufacturability Study for Etching High-Density BST/Pt Capacitors

Published online by Cambridge University Press:  21 March 2011

Jay Hwang
Jay Hwang*
Affiliation:
Applied Materials Inc., 974 E. Arques Ave., M/S 81330 Sunnyvale, CA 94086, U.S.A
Get access

Abstract

Profile control, process repeatability and productivity concerns in etching Pt electrodes are reviewed specifically for application in fabricating high-density BST/Pt capacitors. The approach of using a high temperature cathode in a high-density reactive plasma chamber has produced a repeatable >85° Pt profile, stable etch rate and low particle results over a 500-wafer marathon test. A “corrosion-like” BST defect can be prevented by adding a post etch treatment to remove any corrosive residue from the wafer surface. A feasible manufacturing solution for etching BST/Pt capacitors for future high-density DRAM application is demonstrated.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000, CC6.6.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. The National Technology Roadmap for Semiconductors, SIA, (1997)Google Scholar
2. Kotecki, D.E., Semiconductor International, November (1996) p109–116 Google Scholar
3. Nitayama, A., Kohyama, Y., and Hieda, K., IEDM, 13.1.1 (1998) p355–358 Google Scholar
4. Yoo, W.J., Hahm, J.H., Kim, H.W., Jung, C.O., Koh, Y.B., and Lee, M.Y., Jpn. J. Appl. Phys., Vol 35 (1996) p2501–2504 Google Scholar
5. Shibano, T. and Oomori, T., J. Vac. Sci. Tech. B 15(5), September (1997) p1747–1751 Google Scholar
6. Chung, C.W. and Song, H.G., J. Electrochem. Soc., Vol 144, No 11 (1997) pL294–296 Google Scholar
7. Hwang, J., Mak, S., Ying, C., Chiang, K., and Jin, J., Proc. Semicon Korea Tech. Symp. 99, February (1999) p167–168 Google Scholar
8. Hwang, J., Mak, S., Ying, C., Chiang, K., and Jin, J., 11th ISIF Abstracts, March (1999) p190C Google Scholar
9. Athavale, S.D., Kotecki, D.E., Shen, H., Hwang, J., Ying, C., Lee, D.J., and Mak, S., AVS 46th Int'l Symp. Abstracts, October (1999)Google Scholar
10. Ying, C., Jin, J., and Hwang, J., 199th ECS Meeting Abstracts, May (2000)Google Scholar
11. Nickles, A., Jin, X., Kher, S., Luo, L., Dornfest, C., Zhao, J., Hwang, J., Jin, J., and Chiang, K., 1st Int'l Conf. Adv. Mat'l & Proc. Microelec. Abstracts, March (1999)Google Scholar