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Material Parameters for Analytical and Numerical Modeling of Si and Strained SiGe Heterostructure Devices

Published online by Cambridge University Press:  21 March 2011

S. C. Jain,
A. Mehra,
S. Decoutere,
W. Schoenmaker and
M. Willander
A. Mehra
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
S. Decoutere
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
M. Willander
Affiliation:
Chalmers University of Technology, Department of Physics, S-41296 Göteborg, Sweden
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Abstract

We present calculated values of effective masses, bandgap reduction, and Fermi energy of p-doped Si and strained p-doped SiGe layers. The calculations have been made for Ge concentrations in the range 0 to 30% and boron concentration in the range 1018 cm−3 to 3×1020 cm−3. Empirical expressions for the effective masses are given. These expressions and calculated values of the other parameters are convenient for use in computer codes for modeling device processing and performance. To validate the calculated values, we have compared them with the available experimental results. Good agreement between the calculated and the experimental values is found.

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References

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