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Material System for Packaging 500°C SiC Microsystems

Published online by Cambridge University Press:  21 March 2011

Liang-Yu Chen ,
Robert S. Okojie ,
Philip G. Neudeck ,
Gary W. Hunter  and
Shun-Tien T. Lin
Liang-Yu Chen
Affiliation:
Ohio Aerospace Institute, Cleveland, Ohio 44142
Robert S. Okojie
Affiliation:
NASA Glenn Research Center, Cleveland, Ohio 44135
Philip G. Neudeck
Affiliation:
NASA Glenn Research Center, Cleveland, Ohio 44135
Gary W. Hunter
Affiliation:
NASA Glenn Research Center, Cleveland, Ohio 44135
Shun-Tien T. Lin
Affiliation:
United Technologies Research Center, East Hartford, Connecticut 06108
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Abstract

In order to establish a material system for packaging 500°C SiC microsystems, aluminum nitride (AlN) and aluminum oxide (Al2O3) were selected as packaging substrates, and gold (Au) thick-film materials were selected as substrate metallization material for electrical interconnection system (thick-film printed wires and thick-film metallization based wire-bond) and conductive die-attach interlayer. During a 1500-hour test in atmospheric oxygen with and without electrical bias, the electrical resistance of Au thick-film based interconnection system demonstrated low and stable electrical resistance at 500°C. The electrical interconnection system was also tested in extreme dynamic thermal environment. A silicon carbide (SiC) Schottky diode was attached to ceramic substrate using Au thick-film material as the conductive bonding layer and was successfully tested at 500°C in air for more than 1000 hours. In addition to the electrical test of die-attach in static thermal environments, nonlinear finite element analysis (FEA) was used for thermal mechanical evaluation and optimization of the die-attach in a wide temperature range.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 682: Symposium N – Microelectronics and Microsystems Packaging , 2001 , N4.3
Copyright
Copyright © Materials Research Society 2001

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References

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