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Materials and Structures for Advanced III-HBTs

Published online by Cambridge University Press:  25 February 2011

P. M. Asbeck,
C. W. Tu,
M. C. Ho,
S. L. Fu,
R. C. Gee and
T. P. Chin
P. M. Asbeck
Affiliation:
University of California, San Diego, La Jolla, CA
C. W. Tu
Affiliation:
University of California, San Diego, La Jolla, CA
M. C. Ho
Affiliation:
University of California, San Diego, La Jolla, CA
S. L. Fu
Affiliation:
University of California, San Diego, La Jolla, CA
R. C. Gee
Affiliation:
University of California, San Diego, La Jolla, CA
T. P. Chin
Affiliation:
University of California, San Diego, La Jolla, CA
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Abstract

This paper reviews the present status of heterojunction bipolar transistor (HBT) technology based on GaAlAs/GaAs and InP/InGaAs materials, and discusses a variety of approaches for device improvement. Among the possibilities presented are novel structures to reduce base-collector capacitance, and novel materials to increase breakdown voltage and reduce base-emitter turn-on voltage.

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References

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