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Materials Aspects of Diamond-Based Electronic Devices

Published online by Cambridge University Press:  21 February 2011

J. R. Zeidler,
C. A. Hewett and
R. Nguyen
J. R. Zeidler
Affiliation:
NCCOSC RDTE DIV 804, 53570 Silvergate Ave. RM 2070, San Diego, CA 92152–5070.
C. A. Hewett
Affiliation:
NCCOSC RDTE DIV 555, 49285 Bennett ST. RM 111, San Diego, CA 92152–5791.
R. Nguyen
Affiliation:
NCCOSC RDTE DIV 555, 49285 Bennett ST. RM 111, San Diego, CA 92152–5791.
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Abstract

An overview of enabling materials technologies required for fabrication of electronic devices on diamond is presented. Emphasis is placed on electronic doping of diamond by boron ion implantation. Van der Pauw resistivity and Hall Effect measurements were used to determine the net carrier concentration, carrier mobility and resistivity of natural and synthetic diamonds implanted under various conditions. The measured results for a range of implantation conditions and post-annealing temperatures are discussed in the context cf a model developed by J.F. Prins1. The requirements placed on ohmic contacts to diamond, and a process for fabricating ohmic contacts, is discussed briefly. Finally, current-voltage characteristics of a simple MISFET fabricated on ion implanted natural diamond are presented and analyzed. 1J.F. Prins, Physical Review B, 38 (1988) 5576.

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References

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