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MBE Growth and Characterization of Epitaxial MnS and ZnSe Heterostructures on GaAs

Published online by Cambridge University Press:  21 February 2011

B.J. Skromme,
Y. Zhang,
W. Liu,
B. Parameshwaran,
David J. Smith and
S. Sivananthan
B.J. Skromme
Affiliation:
Dept. of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706
Y. Zhang
Affiliation:
Dept. of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706
W. Liu
Affiliation:
Dept. of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706
B. Parameshwaran
Affiliation:
Dept. of Chemical, Bio-, and Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6206
David J. Smith
Affiliation:
Dept. of Physics and Center for Solid State Science, Arizona State University, Tempe, AZ 85287
S. Sivananthan
Affiliation:
Physics Dept., University of Illinois at Chicago, Chicago, IL 60680
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Abstract

The growth and characterization of heteroepitaxial ZnSe and both rock salt and zinc blende MnS on (100) GaAs substrates is described. The ZnSe layers were grown using a novel thermal cyclic annealing procedure, and exhibit the narrowest double crystal X-ray diffraction rocking curves (28 arc sec FWHM) and free exciton low temperature photoluminescence peaks (0.93 meV FWHM) ever reported. Growth of thin (~300 Å) layers of metastable zinc blende MnS is achieved for the first time using ZnSe buffer layers and low temperature growth. The material is characterized using low temperature and room temperature photoluminescence, X-ray diffraction, and high resolution transmission electron microscopy.

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