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Mbe Growth of Strained-Layer InSb/InAlSb Structures

Published online by Cambridge University Press:  28 February 2011

C.R. Whitehouse,
C.F. Mcconville,
G.M. Williams,
A.G. Cullis,
S.J. Barnett,
M.K. Saker,
M.S. Skolnick and
A.D. Pitt
C.R. Whitehouse
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
C.F. Mcconville
Affiliation:
Now at Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
G.M. Williams
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
A.G. Cullis
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
S.J. Barnett
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
M.K. Saker
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
M.S. Skolnick
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
A.D. Pitt
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, UK
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Abstract

The MBE growth and related materials characterisation of InSb/InAlSb strained-layer structures is described. Band-gap considerations and critical thickness calculations are presented and indicate that this material system should offer considerable device potential. Detailed structural studies, performed using both transmission electron microscopy and X-ray diffraction, confirm the growth of high quality multiple quantum-wells, and 2K photoluminescence has shown corresponding energy upshifted transitions.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990, 283
Copyright
Copyright © Materials Research Society 1990

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References

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