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Mechanical Testing of Thin Films

Published online by Cambridge University Press:  22 February 2011

C. T. Rosenmayer,
F. R. Brotzen and
R. J. Gale
C. T. Rosenmayer
Affiliation:
Rice University, Houston, Texas, 77251
F. R. Brotzen
Affiliation:
Rice University, Houston, Texas, 77251
R. J. Gale
Affiliation:
Texas Instruments Inc., Dallas, Texas, 75265
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Abstract

Metal films used as conductors in integrated circuits must be able to withstand stresses created during their deposition, caused by mismatches in thermal expansion coefficients and by bending which occurs during manufacture and installation. These stresses may be biaxial or uniaxial in nature. This paper discusses testing techniques and gives examples of results of mechanical testing of thin metallic films of aluminum, aluminum-copper(2%), copper, and tungsten in uniaxial and biaxial tension. The film specimens were deposited on and removed from production silicon wafers in order to simulate as much as possible actual device conditions. Basic considerations for the comparison of the two testing methods are also presented.

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