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MEMS SiGe Technologies for RF and Millimeterwave Communications

Published online by Cambridge University Press:  01 February 2011

J. P. Busquére
Affiliation:
LAAS-CNRS 7 Av du Colonel Roche 31077 Toulouse, FranceSTM 850 rue Jean Monnet, 38926 Crolles, France
N. Do
Affiliation:
LAAS-CNRS 7 Av du Colonel Roche 31077 Toulouse, France
F. Bougriha
Affiliation:
LAAS-CNRS 7 Av du Colonel Roche 31077 Toulouse, France
P. Pons
Affiliation:
LAAS-CNRS 7 Av du Colonel Roche 31077 Toulouse, France
K. Grenier
Affiliation:
LAAS-CNRS 7 Av du Colonel Roche 31077 Toulouse, France
D. Dubuc
Affiliation:
LAAS-CNRS 7 Av du Colonel Roche 31077 Toulouse, France
H. Schumacher
Affiliation:
Dept of Electron Devices and Circuits University of Ulm, Albert Einstein Allee 45, D-89081 Ulm, Germany
P. Abele
Affiliation:
Dept of Electron Devices and Circuits University of Ulm, Albert Einstein Allee 45, D-89081 Ulm, Germany
A. Rydberg
Affiliation:
Dept of Material Science Uppsala University, PO Box 528, SE-751 20, Uppsala, Sweden
E. Ojefors
Affiliation:
Dept of Material Science Uppsala University, PO Box 528, SE-751 20, Uppsala, Sweden
P. Ancey
Affiliation:
STM 850 rue Jean Monnet, 38926 Crolles, France
G. Bouche
Affiliation:
STM 850 rue Jean Monnet, 38926 Crolles, France
R. Plana
Affiliation:
LAAS-CNRS 7 Av du Colonel Roche 31077 Toulouse, France
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Abstract

This paper shows the potentialities of merging the MEMS and micromachining with SiGe technologies in order to speed up the performances of next generation of front end in term of flexibility, reconfigurability and adaptability. MEMS technologies are presented based on Benzo-Cyclo-Butene (BCB) materials and Bulk Acoustic Wave (BAW) materials. Special attention is paid to ensure a full compatibility between IC and MEMS. We have shown that very innovative functions could be considered by using this MEMSIC concept.

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