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Metal-Semiconductor Interfaces with Novel Structural and Electrical Properties: Metal Cluster Deposition

Published online by Cambridge University Press:  25 February 2011

G.D. Waddill,
I.M. Vitomirov,
C.M. Aldao,
Steven G. Anderson,
C. Capasso and
J.H. Weaver
G.D. Waddill
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
I.M. Vitomirov
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
C.M. Aldao
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
Steven G. Anderson
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
C. Capasso
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
J.H. Weaver
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455.
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Extract

Studies of Schottky barrier formation at metal-semiconductor interfaces have been complicated by the difficulty of producing an abrupt, “ideal” interface. The commonly used methods of producing metal-semiconductor interfaces result in complex interfacial morphology and chemistry including substrate disruption, atomic interdiffusion, alloy or compound formation, and substrate surface structural changes. The complicated nature of such interfaces makes it difficult from a fundamental point of view to identify the mechanisms dominating Schottky barrier formation for the various stages of development.

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References

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