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Metastability in Doped Hydrogenated Amorphous Silicon: A Bistable Charge-Trapping Defect Model

Published online by Cambridge University Press:  26 February 2011

Howard M. Branz
Howard M. Branz*
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
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Abstract

An analysis of the phenomenology of a class of bistable charge-trapping defects is undertaken and it is proposed that such defects explain the dominant metastable effects observed in doped hydrogenated amorphous silicon (a-Si:H). The stable configuration of such a defect changes with its charge state and a substantial barrier retards changes in configuration. Reconfiguration is accompanied by carrier trapping or emission. Published data on metastabilities observed in quenched, depletion-bias annealed and light-soaked films of both P-doped and B-doped a-Si:H are reviewed. The experimental observations are consistent with the proposed model.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988, 199
Copyright
Copyright © Materials Research Society 1988

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