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Metastable Defect Formation by Hydrogen Relocation and Rebonding

Published online by Cambridge University Press:  15 February 2011

Qiming Li and
R. Biswas
Qiming Li
Affiliation:
Department of Physics and Astronomy and Microelectronics Research Center, Iowa State University, Ames, Iowa 50011
R. Biswas
Affiliation:
Department of Physics and Astronomy and Microelectronics Research Center, Iowa State University, Ames, Iowa 50011
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Abstract

Molecular dynamics with the tight-binding approach are utilized to examine the fundamental process of dangling bond creation via the rebonding of H from Si-H bonds to weak Si-Si bonds. The defect formation energy is found to strongly correlate with the bond-length of the weak Si-Si bond, indicating that the distribution of weak Si-Si bonds controls the total defect density. Rate equations for thermally generated and light-induced defects are developed and utilized to calculate the equilibrium and saturated defect density. The results agree well with experimental data.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995, 407
Copyright
Copyright © Materials Research Society 1995

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References

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