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Metastable Defects in Silicon

Published online by Cambridge University Press:  26 February 2011

A. Chantre
A. Chantre*
Affiliation:
CNET, B.P. 98, F-38243 Meylan Cedex, France
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Abstract

Originally discovered in compound semiconductors, metastability is now being observed for many defects in silicon as well. Simple considerations indeed suggest the existence of alternate, metastable configurations for ab large variety of defect complexes, even as simple as ionic pairs. Techniques to isolate these excited defect configurations are also now well established, and being used routinely in a number of laboratories. This paper will review the recent achievements in this field. Selected examples will be described to illustrate the status of research on metastable defects in silicon.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987, 37
Copyright
Copyright © Materials Research Society 1988

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References

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