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Metrology Issues in Cu-Low-K Chemical Mechanical Planarization

Published online by Cambridge University Press:  11 February 2011

Parshuram B. Zantye,
Arun K. Sikder,
Swetha Thagella,
Nivedita Gulati and
Ashok Kumar
Parshuram B. Zantye
Affiliation:
Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620Center for Microelectronics Research, University of South Florida, Tampa, FL 33620
Arun K. Sikder
Affiliation:
Center for Microelectronics Research, University of South Florida, Tampa, FL 33620
Swetha Thagella
Affiliation:
Center for Microelectronics Research, University of South Florida, Tampa, FL 33620
Nivedita Gulati
Affiliation:
Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620Center for Microelectronics Research, University of South Florida, Tampa, FL 33620
Ashok Kumar
Affiliation:
Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620Center for Microelectronics Research, University of South Florida, Tampa, FL 33620
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Abstract

Ultra low-k materials used in Cu damascene process are inherently soft and weak in nature; hence the evaluation of tribological properties of these materials is an issue of paramount importance in the field of semiconductor fabrication. Chemical Mechanical Polishing (CMP) of these films is a major challenge due to their reduced modulus and cohesive strength. The objective of this research is to develop a strong understanding of the tribological properties of Cu ultra low-k dielectric materials for successful implementation in the semiconductor devices. The Cu ultra low-k systems are polished at different conditions of load and platen rotation and their polishing behavior is compared with the standard Cu-SiO2 system. The polishing behavior of Cu and the barrier Ta material is studied in order to effectively detect the end point of the Cu CMP process. Delamination studies, post process surface characterization using scanning electron microscopy and the reliability issues of these materials also come within the scope of this study.

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References

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