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Microcrystal Si Films Prepared by Remote Plasma CVD

Published online by Cambridge University Press:  21 February 2011

Sung Chul Kim,
Jung Tae Hwang,
Seung Kyu Lee,
Chang Young Jung,
Sung Moo Soe,
Sung Ok Koh,
Kwan Soo Chung and
Jin Jang
Sung Chul Kim
Affiliation:
Dept. of Physics and Dept. of Electronics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Jung Tae Hwang
Affiliation:
Dept. of Physics and Dept. of Electronics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Seung Kyu Lee
Affiliation:
Dept. of Physics and Dept. of Electronics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Chang Young Jung
Affiliation:
Dept. of Physics and Dept. of Electronics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Sung Moo Soe
Affiliation:
Dept. of Physics and Dept. of Electronics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Sung Ok Koh
Affiliation:
Dept. of Physics and Dept. of Electronics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Kwan Soo Chung
Affiliation:
Dept. of Physics and Dept. of Electronics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Jin Jang
Affiliation:
Dept. of Physics and Dept. of Electronics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
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Abstract

The effects of deposition temperature, rf power and hydrogen dilution ratio on the growth, structure and transport of p-type microcrystal(μc-) Si films deposited by remote plasma CVD have been investigated. While low substrate temperature and low rf power yield small grain sizes, high temperature and high rf power tend to supress the growth of grains. The etching of Si by hydrogen radicals plays an important role to grow μc-Si, but excess etching supresses the growth of crystallites. We obtained 400 A of grain size and 3.5 S/cm of room temperature conductivity for p-type μ-Si.

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References

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