Hostname: page-component-7b7567c8c-tnzcf Total loading time: 0 Render date: 2026-11-12T18:46:51.804Z Has data issue: false hasContentIssue false
  • English
  • Français

Microdefects and Impurities in Dislocation-Free Silicon Crystals

Published online by Cambridge University Press:  15 February 2011

Takao Abe,
Hirofumi Harada and
Jun-Ichi Chikawa
Takao Abe
Affiliation:
Shin-Etsu Handotai Co., 2–13–1, Isobe, Annaka-shi, Gunma-ken, 379–01, Japan
Hirofumi Harada
Affiliation:
Shin-Etsu Handotai Co., 2–13–1, Isobe, Annaka-shi, Gunma-ken, 379–01, Japan
Jun-Ichi Chikawa
Affiliation:
NHK Broadcasting Science Research Laboratories, Kinuta, Setagaya-ku, Tokyo, 157
Get access

Abstract

Microdefects in striated (swirl defects) and nonstriated distribution (D-defects) have been observed in float-zoned crystals doped with various impurities by x-ray topography following copper decoration. A new type of defects were found to be present in swirl-free and D-defect-free regions and to become invisible by doping gallium. This gallium effect led to the conclusion that they are microprecipitates produced from residual oxygen impurity in FZ crystals. Effects of various impurities on defect formation indicate that D-defects are of vacancy agglomerates. It was observed that swirl defects are formed when the temperature gradient near the interface is high, and that their formation is suppressed by doping nitrogen. Formation processes of microprecipitates, swirls, and D-defects are discussed on the basis of observation of their mutual interaction and the impurity effects.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982, 1
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Plaskett, T. S., Trans. Met. Soc. AIME 233, 809 (1965).Google Scholar
2. Abe, T., Samizo, T., and Maruyama, S., Jpn. J. Appl. Phys. 5, 458 (1966).CrossRefGoogle Scholar
3. de Kock, A. J. R., Appl. Phys. Lett. 16, 100 (1970).CrossRefGoogle Scholar
4. de Kock, A. J. R., Philips Res. Rept. Suppl. No. 1 (1973).Google Scholar
5. Föll, H. and Kolbesen, B. O., Appl. Phys. 8, 319 (1975).CrossRefGoogle Scholar
6. Petroff, P. M. and de Kock, A. J. R., J. Cryst. Growth 30 117 (1975).CrossRefGoogle Scholar
7. Roksnoer, R. J. and Van den Boom, M. M. B., J. Cryst Growth 53, 563 (1981).CrossRefGoogle Scholar
8. Abe, T., Harada, H., and Chikawa, J. in: Procedings of 12th International Conference on Defects and Radiation Effects in Semiconductors, to be published.Google Scholar
9. For instance, see Corbett, J. W. and Karins, P., Nuclear Instr. Methods 182/183, 457 (1981).CrossRefGoogle Scholar
10. Seeger, A. and Chik, K. P., Phys. Stat. Solidi 29, 455 (1968).CrossRefGoogle Scholar
11. Yoshida, M., Arai, E., Nakamura, H., and Terunuma, Y., J. Appl. Phys. 45, 1498 (1974).CrossRefGoogle Scholar
12. Hu, S. M., J. Appl. Phys. 45, 1567 (1974).CrossRefGoogle Scholar
13. Mizuo, S. and Higuchi, H., Jpn. J. Appl. Phys. 20, 739 (1981).CrossRefGoogle Scholar
14. Hu, S. M., J. Vac. Sic. Technol. 14 17 (1977).CrossRefGoogle Scholar
15. Petroff, P. M. and de Kock, A. J. R., J. Cryst. Growth 35, 4 (1976).CrossRefGoogle Scholar
16. Chikawa, J. and Shirai, S., J. Cryst. Growth 39, 328 (1977).CrossRefGoogle Scholar
17. Föll, H., Gosele, U., and Kolbesen, B. O., J. Cryst. Growth 40, 90 (1977).CrossRefGoogle Scholar
18. de Kock, A. J. R., Roksnoer, P. J., and Boonen, P. G. T., J. Cryst. Growth 22, 311 (1974).CrossRefGoogle Scholar
19. Keller, W. and Möhlbauer, A., Inst. Phys. Conf. Ser. No. 23, Chap. 8, p. 538 (1975).Google Scholar
20. Abe, T., Abe, Y., and Chikawa, J. in: Semiconductor Silicon, Huff, H. R. and Burgess, R. R. eds. (Electrochemical Soc. Princeton, 1973) pp. 95–106.Google Scholar
21. Craven, R. A. in: Semiconductor Silicon, Huff, H. R., Kriegler, R. J., and Takeishi, Y. eds. (Electrochemical Soc., Rennington, N. J. 1981) p. 670.Google Scholar
22. Chikawa, J. and Sato, F. in Defects in Semiconductors, Narayan, J. and Tan, T. Y. eds. (North-Holland, New York, 1981) pp. 317–332.Google Scholar
23. Sato, F., Sunada, T., and Chikawa, J., Materials Lett. 1, 111 (1982).CrossRefGoogle Scholar
24. Chikawa, J. and Shirai, S., Jpn. J. Appl. Phys. Suppl. 18–1, 153 (1978).Google Scholar
25. Abe, T., Kikuchi, K., Shirai, S., and Muraoka, S.: in Semiconductor Silicon, Huff, H. R., Kriegler, R. J., and Takeishi, Y. eds. (Electrochemical Soc., Rennington, N. J. 1981) p. 670.Google Scholar
26. Ravi, K. V. and Varker, C. J.: in Ref. 20, p. 670.Google Scholar