Hostname: page-component-7b7567c8c-mnklg Total loading time: 0 Render date: 2026-11-13T09:50:39.656Z Has data issue: false hasContentIssue false
  • English
  • Français

Micromechanical Process Integration and Material Optimization for High Performance Silicon-Germanium Bolometers

Published online by Cambridge University Press:  30 July 2012

Gunnar B. Malm,
Mohammadreza Kolahdouz,
Fredrik Forsberg,
Niclas Roxhed and
Frank Niklaus
Gunnar B. Malm
Affiliation:
School of ICT
Mohammadreza Kolahdouz
Affiliation:
School of ICT
Fredrik Forsberg
Affiliation:
Microsystem Technology Lab, KTH Royal Institute of Technology, Sweden
Niclas Roxhed
Affiliation:
Microsystem Technology Lab, KTH Royal Institute of Technology, Sweden
Frank Niklaus
Affiliation:
Microsystem Technology Lab, KTH Royal Institute of Technology, Sweden
Get access

Abstract

Semiconductor-based thermistors are very attractive sensor materials for uncooled thermal infrared (IR) bolometers. Very large scale heterogeneous integration of MEMS is an emerging technology that allows the integration of epitaxially grown, high-performance IR bolometer thermistor materials with pre-processed CMOS-based integrated circuits for the sensor read-out. Thermistor materials based on alternating silicon (Si) and silicon-germanium (SiGe) epitaxial layers have been demonstrated and their performance is continuously increasing. Compared to a single layer of silicon or SiGe, the temperature coefficient of resistance (TCR) can be strongly enhanced to about 3 %/K, by using thin alternating layers. In this paper we report on the optimization of alternating Si/SiGe layers by advanced physically based simulations, including quantum mechanical corrections. Our simulation framework provides reliable predictions for a wide range of SiGe layer compositions, including concentration gradients. Finally, our SiGe thermistor layers have been evaluated in terms of low-frequency noise performance, in order to optimize the bolometer detectivity.

Keywords

semiconductingsensorbonding

Information

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1437: Symposium L – Group IV Photonics for Sensing and Imaging , 2012, mrss12-1437-l04-02
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Kaplan, H., Practical applications of infrared thermal sensing and imaging equipment. Bellingham, Washington, USA: The International Society for Optical Engineering (SPIE), 2007.Google Scholar
[2] Alam, M. S. and Bal, A., “Improved multiple target tracking via global motion compensation and optoelectronic correlation,” IEEE Transactions on Industrial Electronics, vol. 54, pp. 522–9, 2007.Google Scholar
[3] Källhammer, J.-E., Pettersson, H., Eriksson, D., Junique, S., Savage, S., Vieider, C., Andersson, J. Y., Niklaus, F., and Stemme, G., “Fulfilling the Pedestrian Protection Directive Using a Long-Wavelength Infrared Camera Designed to Meet the Performance and Cost Targets,” in Proc. SPIE 2006, Vol. 6198, pp.74–84,, Strasbourg, France, 2006.Google Scholar
[4] Vieider, C., et al. ., “Low-cost far infrared bolometer camera for automotive use,” in Infrared Technology and Applications XXXIII, 9 April 2007, USA, 2007, pp. 65421–1.Google Scholar
[5] Kohin, M. and Butler, N. R., “Performance limits of uncooled VOx microbolometer focal plane arrays,” in Infrared Technology and Applications XXX, 12-16 April 2004, USA, 2004, pp. 447–53.Google Scholar
[6] Filachev, A. M., Ponomarenko, V. P., Taubkin, I. I., and Ushakova, M. B., “Infrared focal plane arrays: state of the art and development trends,” in 17th International Conference on Photoelectronics and Night Vision Devices, 27-31 May 2002, USA, 2003, pp. 52–85.Google Scholar
[7] Ericsson, P., et al. ., “Toward 17 m pitch heterogeneously integrated Si/SiGe quantum well bolometer focal plane arrays,” in Infrared Technology and Applications XXXVII, 25-29 April 2011, USA, 2011, p. 801216 (10 pp.).Google Scholar
[8] Roxhed, N., et al. ., “Low-Cost Uncooled Microbolometers for Thermal Imaging,” in Optical Sensing and Detection, 12-15 April 2010, USA, 2010, p. 772611 (10 pp.).Google Scholar
[9] Forsberg, F., Roxhed, N., Ericsson, P., Wissmar, S., Niklaus, F., and Stemme, G., “High-performance quantum-well silicon-germanium bolometers using IC-compatible integration for low-cost infrared imagers,” in 15th International Conference on Solid-State Sensors, Actuators and Microsystems. Transducers 2009, 21-25 June 2009, Piscataway, NJ, USA, 2009, pp. 2214–17.Google Scholar
[10] Niklaus, F., Vieider, C., and Jakobsen, H., “MEMS-based uncooled infrared bolometer arrays: a review,” in MEMS/MOEMS Technologies and Applications III, 12 Nov. 2007, USA, 2007, pp. 68360–1.Google Scholar
[11] Niklaus, F., Decharat, A., Jansson, C., and Stemme, G., “Performance model for uncooled infrared bolometer arrays and performance predictions of bolometers operating at atmospheric pressure,” Infrared Physics and Technology, vol. 51, pp. 168–77, 2008.Google Scholar
[12] Kruse, P. W., “Can the 300-K radiating background noise limit be attained by uncooled thermal imagers?,” in Infrared Technology and Applications XXX, 12-16 April 2004, USA, 2004, pp. 437–46.Google Scholar
[13] Marasco, P. L. and Dereniak, E. L., “Uncooled infrared sensor performance,” in Infrared Technology XIX, 12-14 July 1993, USA, 1993, pp. 363–78.Google Scholar
[14] Kruse, P. W., Uncooled thermal imaging arrays, systems and applications. Bellingham, WA, USA: SPIE Press,, 2001.Google Scholar
[15] Tissot, J. L., Durand, A., Garret, T., Minassian, C., Robert, P., Tinnes, S., and Vilain, M., “High performance uncooled amorphous silicon VGA IRFPA with 17-m pixel-pitch,” in Infrared Technology and Applications XXXVI, 5-9 April 2010, USA, 2010, p. 76600T (7 pp.).Google Scholar
[16] Schimert, T., Hanson, C., Brady, J., Fagan, T., Taylor, M., McCardel, W., Gooch, R., Gohlke, M., and Syllaios, A. J., “Advances in small-pixel, large-format -Si bolometer arrays,” in Infrared Technology and Applications XXXV, 13-17 April 2009, USA, 2009, p. 72980T (5 pp.).Google Scholar
[17] Pochic, D., Durand, A., Tissot, J. L., Crastes, A., Vilain, M., Legras, O., Tinnes, S., Minassian, C., and Robert, P., “Uncooled amorphous silicon IRFPA for high performance and high volume applications,” in Electro-Optical and Infrared Systems: Technology and Applications VI, 31 Aug.-3 Sept. 2009, USA, 2009, p. 74810J (10 pp.).Google Scholar
[18] Lapisa, M., Stemme, G., and Niklaus, F., “Wafer-Level Heterogeneous Integration for MOEMS, MEMS, and NEMS,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 17, pp. 629–44, 2011.Google Scholar
[19] Lemm, J., Lapisa, M., Decharat, A., Forsberg, F., Populin, M., Niklaus, F., Stemme, G., Zimmer, F., and Roxhed, N., “Wafer bonding with nano-imprint resists as sacrificial adhesive for fabrication of silicon-on-integrated-circuit (SOIC) wafers in 3D integration of MEMS and ICs,” Sensors and Actuators: A Physical, vol. 154, pp. 180–6, 2009.Google Scholar
[20] Niklaus, F., Haasl, S., and Stemme, G., “Arrays of monocrystalline silicon micromirrors fabricated using CMOS compatible transfer bonding,” Journal of Microelectromechanical Systems, vol. 12, pp. 465–9, 2003.Google Scholar
[21] Niklaus, F., Pejnefors, J., Dainese, M., Haggblad, M., Hellstrom, P. E., Wallgren, U. J., and Stemme, G., “Characterization of transfer-bonded silicon bolometer arrays,” in Infrared Technology and Applications XXX, 12-16 April 2004, USA, 2004, pp. 521–30.Google Scholar
[22] Niklaus, F., Stemme, G., Lu, J. Q., and Gutmann, R. J., “Adhesive wafer bonding,” Journal of Applied Physics, vol. 99, Feb 2006.Google Scholar
[23] Zimmer, F., Lapisa, M., Bakke, T., Bring, M., Stemme, G., and Niklaus, F., “One-megapixel Monocrystalline-silicon Micromirror Array on CMOS Driving Electronics Manufactured With Very Large-scale Heterogeneous Integration,” Journal of Microelectromechanical Systems, vol. 20, pp. 564–72, 2011.Google Scholar
[24] Radamson, H. H., Kolahdouz, M., Shayestehaminzadeh, S., Farniya, A. A., and Wissmar, S., “Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level,” Applied Physics Letters, vol. 97, pp. 223507–1, Nov 29 2010.Google Scholar
[25] . di Benedetto, L, Kolahdouz, M., Malm, B. G., Ostling, M., and Radamson, H. H., “Strain balance approach for optimized signal-to-noise ratio in SiGe quantum well bolometers,” Proceedings of the European Solid State Device Research Conference, 2009. ESSDERC ’09. , pp. 101–104 14-18 Sept. 2009.Google Scholar
[26] Wissmar, S. G. E., Kolahdouz, M., Yamamoto, Y., Tillack, B., Vieider, C., Andersson, J. Y., and Radamsson, H. H., “Monocrystalline SiGe for high-performance uncooled thermistor,” 2007 International Semiconductor Device Research Symposium, Vols. 1 and 2, pp. 462–463, 2007.Google Scholar
[27] von Haartman, M. and Östling, M., Low-Frequency Noise in Advanced MOS devices: Springer, 2007.Google Scholar
[28]“Sentaurus TCAD version 10.0 from Synopsys Inc. www.synopsys.com,”Google Scholar