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Microstructural Characterization of GaAs Substrates

Published online by Cambridge University Press:  25 February 2011

T. M. Moore,
S. Matteso,
W. M. Duncan and
R. J. Matyi
T. M. Moore
Affiliation:
Texas Instruments, Incorporated, Central Research Laboratories, Dallas, TX 75265
S. Matteso
Affiliation:
Texas Instruments, Incorporated, Central Research Laboratories, Dallas, TX 75265
W. M. Duncan
Affiliation:
Texas Instruments, Incorporated, Central Research Laboratories, Dallas, TX 75265
R. J. Matyi
Affiliation:
Texas Instruments, Incorporated, Central Research Laboratories, Dallas, TX 75265
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Abstract

The defect microstructures of GaAs substrates have been investigated in a multi-technique approach including integral cathodoluminescence (CL), scanning electron acoustic microscopy (SEAM), double crystal x-ray topography (XRT), and defect delineation etch. The XRT, CL, and SEAM studies are of identical areas on<100> SI GaAs(Cr) grown by the liquid encapsulated Czochralski (LEC) method and by the horizontal Bridgman (HB) method. Correlation was made to the defect structure revealed by defect delineation etching. The samples were also characterized by Fourier transform photoluminescence (FTPL) to qualitatively identify the major transitions contributing to the CL images. The CL, SEAM, XRT, and defect delineation etch images of each material are compared and their different perspectives are discussed.

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Articles
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MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986, 379
Copyright
Copyright © Materials Research Society 1986

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