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Microstructural Characterization of High Dose Oxygen Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

J. L. Batstone,
Alice E. White,
K. T. Short,
J. M. Gibson and
D. C. Jacobson
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
Alice E. White
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
K. T. Short
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
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Abstract

The microstructure of oxygen implanted silicon for use in silicon-on- insulator technology has been examined by transmission electron microscopy. A variety of buried oxide layers prepared using oxygen doses below and above that required for stoichiometric SiO2 formation have been studied. High resolution imaging in crosssection has revealed exceptionally flat Si-SiO2 interfaces, comparable to the best thermally grown Si-SiO2 interfaces. Examination of as-implanted material shows a complex interwoven crystalline/amorphous structure which evolves during high temperature (1350–1400° C) annealing into a buried oxide layer.

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References

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