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Microstructure Evolution of On-substrate NiTi Shape Memory Alloy Thin Films

Published online by Cambridge University Press:  01 February 2011

Xi Wang,
Ann Lai,
Joost J. Vlassak and
Yves Bellouard
Xi Wang
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 01238, USA
Ann Lai
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 01238, USA
Joost J. Vlassak
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 01238, USA
Yves Bellouard
Affiliation:
Center for Automation Technologies, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
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Abstract

When deposited at room temperature, sputtered NiTi thin films are amorphous and need to be crystallized before they can be used as a functional material. We present the results of an annealing study on substrate-constrained NiTi shape memory thin films. Amorphous films of a NiTi shape memory alloy were deposited by UHV sputtering. Films of thickness 1.0 μm were grown on (100) Si wafers both with and without an LPCVD SiNx barrier. The as-deposited films were annealed in vacuum at temperatures ranging from 500°C to 800°C. The microstructure of the annealed films was characterized using transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), and Rutherford back scattering (RBS).

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References

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