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Microstructure of Ultra High Dose Self Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

X. F. Zhu,
J. S. Williams,
D. J. Llewellyn and
J. C. McCallum
X. F. Zhu
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia
J. S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia
D. J. Llewellyn
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia
J. C. McCallum
Affiliation:
School of Physics, University of Melbourne, Parkville, 3052, Australia
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Abstract

This study has investigated the microstructure of ultra high dose (∼ 1018 cm−2) self implantation into Si. Implants have been carried out into both (100) Si and pre-amorphised Si as a function of implant temperature between liquid nitrogen temperature and 350°C. Results show that high dose implantation into completely amorphous Si (a-Si) produces layers which regrow quite well during subsequent solid phase epitaxy. In contrast, implantation into crystalline Si (c-Si) or part amorphous/part crystalline Si can lead to rich and varied microstructures at elevated temperatures, even extending to porous-like structures in some cases. Strong dynamic annealing and agglomeration of points defects in c-Si is thought to be responsible for such behaviour.

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References

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