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Microstructures of Polysilicon

Published online by Cambridge University Press:  22 February 2011

R. Sinclair,
A. H. Carim,
J. Morgiel and
J. C. Bravman
R. Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
A. H. Carim
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
J. Morgiel
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
J. C. Bravman
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
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Abstract

Some typical microstructural studies of polycrystalline silicon using transmission electron microscopy (TEM) are described, including the application of this material for assisting TEM investigations themselves. Examples include oxidation and realignment of polysilicon thin films, the structure of polysilicon in EEPROM devices, polysilicon in trench capacitors and measurement of SiO2 layer thicknesses with polysilicon overlayers. It is also shown tha grain growth in heavily phosphorus doped polysilicon films can be followed by in situ heating in the TEM.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987, 27
Copyright
Copyright © Materials Research Society 1988

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References

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