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Microwave Joining of Silicon Carbide Using Several Different Approaches

Published online by Cambridge University Press:  25 February 2011

Iftikhar Ahmad,
Richard Silberglitt,
W. Murray Black,
Hussamaldin S. Sa'Adaldin and
Joel D. Katz
Iftikhar Ahmad
Affiliation:
Technology Assessment & Transfer, Inc., Annapolis, MD 21401
Richard Silberglitt
Affiliation:
Technology Assessment & Transfer, Inc., Annapolis, MD 21401
W. Murray Black
Affiliation:
Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030
Hussamaldin S. Sa'Adaldin
Affiliation:
Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030
Joel D. Katz
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87544
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Abstract

Microwave joining of sintered silicon carbide, both to itself and reaction bonded silicon carbide, has been accomplished in a single mode rectangular resonant cavity. Several approaches using different interlayer materials were employed to join sintered silicon carbide. Effective joining of reaction bonded silicon carbide to itself and sintered silicon carbide was accomplished without the use of any interlayer material in the single mode resonant cavity as well as in a multi-mode oven. Specimens cut from 0.95 cm diameter rods were joined in the single mode cavity, whereas a variety of arbitrary shapes and larger specimens (of reaction bonded silicon carbide) were joined in the multi-mode oven.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 269: Symposium L – Microwave Processing of Materials III , 1992, 271
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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