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Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells

Published online by Cambridge University Press:  10 February 2011

Seung-Woong Lee,
Kazuhiko Hirakawa and
Yozo Shimada
Seung-Woong Lee
Affiliation:
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
Kazuhiko Hirakawa
Affiliation:
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
Yozo Shimada
Affiliation:
Also, CREST, Japan Science and Technology Corporation, 1-4-25 Mejiro, Toshima-ku, Tokyo 171-003 1, Japan
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Abstract

We have designed and fabricated a quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped A1GaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, we found that this device has high operation temperature and very high photoconductive gain.

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