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Mn charge states in GaMnN as a function of Mn concentration and co-doping

Published online by Cambridge University Press:  01 February 2011

Enno Malguth,
Axel Hoffmann,
Wolfgang Gehlhoff,
Matthew H. Kane and
Ian T. Ferguson
Enno Malguth
Affiliation:
malguth@physik.tu-berlin.de, Technische Universität Berlin, Institut für Festkörperphysik, Berlin, 10623, Germany
Axel Hoffmann
Affiliation:
hoffmann@physik.tu-berlin.de, Technische Universität Berlin, Institut für Festkörperphysik, Berlin, 10623, Germany
Wolfgang Gehlhoff
Affiliation:
gehlhoff@sol.physik.TU-Berlin.DE, Technische Universität Berlin, Institut für Festkörperphysik, Berlin, 10623, Germany
Matthew H. Kane
Affiliation:
mhkane@ou.edu, Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA, 30332-0245, United States
Ian T. Ferguson
Affiliation:
ian.ferguson@ece.gatech.edu, Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA, 30332-0245, United States
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Abstract

In the context of the pursuit of a dilute magnetic semiconductor for spintronic applications, a set of GaMnN samples with varying Mn concentration and Si or Mg co-doping was investigated by optical and electron spin resonance spectroscopy. The results clearly demonstrate how the charge state of Mn is changed between 2+, 3+ and 4+ by Mg and Si co-doping. For p-type GaMnN we show that the introduction of the Mn3+/4+ donor can be compensated by Mg co-doping lowering the Fermi energy below the Mn3+/4+ level. While our results are in agreement with the hypothesis that the infrared photoluminescence appearing in GaMnN upon Mg doping originates from Mn4+, an unambiguous proof is still to be presented. Under this assumption, our measurements show that the Mn4+ center must be excited via an extra-center process at 2.54 eV.

Keywords

III-Voptical propertiesspintronic

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1040: Symposium Q – Nitrides and Related Bulk Materials , 2007, 1040-Q09-18
Copyright
Copyright © Materials Research Society 2008

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