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A Model for Cw Laser Recrystallization Including Reflectivity Effects

Published online by Cambridge University Press:  22 February 2011

I.D. Calder
I.D. Calder*
Affiliation:
Northern Telecom Electronics Ltd., P.O. Box 3511, Station C, Ottawa, Canada, K1Y 4H7
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Abstract

A simple, practical model is developed for cw laser recrystallization of silicon and SOI structures, taking into account spatial variations in optical reflectivity. The power absorption is assumed to be uniform within each of three regions: the central molten spot, the annular two-phase region, and an outer annulus to account for absorption in the solid phase. Analytic expressions are obtained for the radial and depth dependence of the temperature, for the melt depth, the melt radius, the melt threshold, the crystallization threshold and the substrate melt threshold. SOI structures are considered and comparison with some experimental results shows excellent agreement.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983, 507
Copyright
Copyright © Materials Research Society 1984

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References

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