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Modelinig of Dopant Diffusion and Associated Effects in Silicon

Published online by Cambridge University Press:  15 February 2011

Richard B. Fair
Richard B. Fair*
Affiliation:
Microelectronics Center of North Carolina, Post Office Box 12889 Research Triangle Park, North Carolina 27709
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Abstract

Research in the area of dopant diffusion in Si has focused on identifying the specific mechanisms and point defects involved. Recent approaches include observing the effects of diffusion and doping on oxygen precipitation, stacking fault growth or shrinkage, enhanced/retarded diffusion of one dopant in the presence of another. Very few of these studies have yielded unambiguous interpretations as a result of the indirect nature of the experiments. However, taken together we can infer the relative importance of vacancies versus Si selfinterstitials in the diffusion of each dopant species.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982, 61
Copyright
Copyright © Materials Research Society 1982

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References

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