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Modelling Growth Morphologies on Different Length Scales

Published online by Cambridge University Press:  26 February 2011

J. Iwan,
D. Alexander,
R.-F. Xiao and
F. Rosenberger
J. Iwan
Affiliation:
Center for Microgravity and Materials Research, University of Alabama in Huntsville, Huntsville, Alabama 35899
D. Alexander
Affiliation:
Center for Microgravity and Materials Research, University of Alabama in Huntsville, Huntsville, Alabama 35899
R.-F. Xiao
Affiliation:
Center for Microgravity and Materials Research, University of Alabama in Huntsville, Huntsville, Alabama 35899
F. Rosenberger
Affiliation:
Center for Microgravity and Materials Research, University of Alabama in Huntsville, Huntsville, Alabama 35899
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Abstract

Microscopic morphologies of monocomponent and binary solids growing from melts and vapors are simulated with a Monte Carlo model that accounts for bulk diffusion, interface attachment and detachment kinetics and surface diffusion. The interplay between transport and interface kinetics on morphologies and its effect on microstructures including lamellar spacing, tilted lamellar and oscillatory structures is investigated. An important aspect of these models is the length scale of the simulation.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 278: Symposium W – Computational Methods in Materials Science , 1992, 269
Copyright
Copyright © Materials Research Society 1992

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References

[1] Mullins, W.W. and Sekerka, R.F., J. Appl. Phys. 35, 444 (1964).CrossRefGoogle Scholar
[2] Sekerka, R.F., in Encyclopedia of Materials Science and Engineering, Ed. Cahn, R.W. (Pergamon, New York, 1986) p. 3486.Google Scholar
[3] Wollkind, D.J., Oulton, D.B. and Sriranganathan, R., J. Crystal Growth 79 (1984) 1767.Google Scholar
[4] Langer, J.S., Rev. Mod. Phys. 52, 1 (1980).Google Scholar
[5] Ungar, L.H. and Brown, R.A., Phys. Rev. B30, 3993 (1984).Google Scholar
[6] Ramprasad, N., Bennett, M.J. and Brown, R.A., Phys. Rev. B31, 583 (1985).Google Scholar
[7] Cherepanova, T.A., Phys. Stat. Sol. 58, 469 (1980); Phys. Stat. Sol. 59, 371 (1980); T.A. Cherepanova and J.B. Dzelme, Crystal Research and Technology 16, 399 (1981).Google Scholar
[8] Saito, Y. and Ueta, T., Phys. Rev. A 40, 3408 (1989).Google Scholar
[9] Pfeiffer, H., Klupsch, T. and Haubenreiβer, W., Microscopic Theory of Crystal Growth (Akademie, Berlin, 1989).Google Scholar
[10] Schochet, O., Kassner, K., Jacob, E. Ben, Lipson, S.G. and Miiller-Krumbhaar, H., in press Physica A (1992).Google Scholar
[11] Jackson, K.A. and Hunt, J.D., Trans. Metall. Soc. AIME 236, 1129 (1966).Google Scholar
[12] Langer, J. S., Phys. Rev. Lett. 44, 1023 (1980).Google Scholar
[13] Dayte, V. and Langer, J.S., 24, 4155 (1981).Google Scholar
[14] Langer, J. S., Ann. N. Y. Acad. Sci. 373, 179 (1981).Google Scholar
[15] Faivre, G., Cheveigné, S. de, Guthman, C. and Kurowski, P., Europhys. Lett. 9, 779 (1989).Google Scholar
[16] Racek, R., These d'Université, 1973; H.E. Cline, Mater. Sci. Eng. 65, 93 (1984).Google Scholar
[17] Simon, A.J., Bechhofer, J. and Libchaber, A., Phys. Rev. Lett. 61, 2574 (1988).Google Scholar
[18] Rabuad, M., Michelland, S. and Gunaratne, G.H., Phys. Rev. Lett. 63, 1954 (1989).Google Scholar
[19] Kassner, K. and Misbah, C., Phys. Rev. Lett. 65, 1458 (1990).CrossRefGoogle Scholar
[20] Kassner, K. and Misbah, C., Phys. Rev. A 44, 6533 (1991).Google Scholar
[21] Brattkus, K., Caroli, B., Caroli, C. and Roulet, B., Groupe de Physique des Solides Report No. GPS 90-008 (1990).Google Scholar
[22] Karma, A., Phys. Rev. Lett. 59, 71 (1987).Google Scholar
[23] Xiao, R.F., Alexander, J.I.D. and Rosenberger, F., Phys. Rev. A45, R571 (1992).CrossRefGoogle Scholar
[24] Xiao, R.F., Alexander, J.I.D. and Rosenberger, F., to be published, Phys. Rev. A (1992).Google Scholar
[25] Witten, T. A. and Sander, L. M., Phys Rev. Lett. B. 47, 1400(1981); Phys Rev. B. 27, 5686 (1983).Google Scholar
[26] Xiao, R.-F, Alexander, J.I.D. and Rosenberger, F., Physical Review A 43, 2977 (1991).CrossRefGoogle Scholar
[27] Xiao, R.-F, Alexander, J.I.D. and Rosenberger, F., J. Crystal Growth 100, 313 (1990).Google Scholar
[28] Gilmer, G.H. and Bennema, P., J. Crystal Growth 13/14, 148 (1972).Google Scholar
[29] Kassner, K. and Misbah, C., Phys. Rev. A 59, 6513 (1991).Google Scholar