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Modelling Photoelectron Effects In X-Ray Lithography

Published online by Cambridge University Press:  15 February 2011

L. E. Ocola and
F. Cerrina
L. E. Ocola
Affiliation:
Dept. of Physics, University of Wisconsin, Madison, WI 53706
F. Cerrina
Affiliation:
Electrical and Computer Engineering, University of Wisconsin, Madison, WI 53706
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Abstract

The study of photoelectron effects in X-ray Lithography motivates the need for modeling codes to simulate these effects to have an estimate of the influence of x-ray generated photoelectrons in the exposure of resists. We have performed a series of Monte Carlo simulations to study the spatial distribution of photoelectrons in a resist, PMMA, and parametrized this distribution with a set of energy-dependent gaussians for monochromatic X-rays within an energy range of 0.5 KeV to 2.5 KeV. We discuss the effects of the the redistribution of the photoelectron kinetic energy as a function of the electrons generated by the x-ray absorption in various atomic species.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 306: Symposium K – Materials Aspects of X-Ray Lithography , 1993, 47
Copyright
Copyright © Materials Research Society 1993

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