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Modification of Point Defects in Quartz for Device Applications

Published online by Cambridge University Press:  21 February 2011

J. C. King and
D. R. Koehler
J. C. King
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
D. R. Koehler
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
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Abstract

Impurity centers in quartz play a significant role in the behavior of precision crystal resonators subjected to ionizing radiation. The substitutional Al center, charge compensated by Na, Li, H or a hole, is now known to be the primary contributing factor in most radiation-induced effects. Acoustic loss measurements, ESR measurements, optical studies and IR studies of these defects, over extended temperature ranges, have contributed substantially to our understanding of the impurity centers' role. Radiation-induced frequency and acoustic loss changes in quartz crystal resonators are now understood in terms of the evolving character of the defect center in a radiation field. This understanding has prompted material modification efforts such as high temperature electrolysis and doping technologies which permit, for instance, the fabrication of frequency control devices that are little affected by hostile environments.

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