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Modified Oxide Properties from Dopant Effects at the Si-SiO2 Interface

Published online by Cambridge University Press:  26 February 2011

Michael A. Jackson,
Lawrence Salvati,
Roland L. Chin and
Wayne A. Anderson
Michael A. Jackson
Affiliation:
State University of New York at Buffalo, Electrical and Computer Engineering, 217C Bonner Hall, Amherst, NY 14260
Lawrence Salvati
Affiliation:
Perkin-Elmer Physical Electronics Division, Five Progress Street, Edison, NJ 08820
Roland L. Chin
Affiliation:
Allied Chemical Corporation, Buffalo, NY 14210
Wayne A. Anderson
Affiliation:
State University of New York at Buffalo, Electrical and Computer Engineering, 217C Bonner Hall, Amherst, NY 14260
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Abstract

Both thin, 60→140Å thick, and native oxides on As and P doped Si were studied via null ellipsometry and angle resolved ESCA. Results showed higher oxide growth rates to occur for higher surface concentrations of a given dopant. For similar surface concentrations, P-doped samples oxidized faster than As-doped, in both cases. Exact oxidation rates were not determined as results indicate that stoichiometric variations and oxidation of carbon contamination influence thickness determination of these oxides.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985, 573
Copyright
Copyright © Materials Research Society 1986

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References

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