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Modifying Crystallographic Orientations of Polycrystalline SiFilms Using Ion Channeling

Published online by Cambridge University Press:  25 February 2011

K. T-Y. Kung,
R. B. Ivepson and
R. Reif
K. T-Y. Kung
Affiliation:
Department of Electrical Engineering and Computer Science Massachusetts Institute of technology, Cambridge, MA 02139
R. B. Ivepson
Affiliation:
Department of Electrical Engineering and Computer Science Massachusetts Institute of technology, Cambridge, MA 02139
R. Reif
Affiliation:
Department of Electrical Engineering and Computer Science Massachusetts Institute of technology, Cambridge, MA 02139
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Abstract

Polycrystalline silicon films 4800 Å thick deposited via low pressurechemical vapor deposition on oxidized silicon wafers have been amorphized bysilicon ion implantation and subsequently recrystallized at 700°C. Due tochanneling of the ions through grains whose <110> axes weresufficiently parallel to the beam, these grains survived the implantationstep and acted as seed crystals for the solid-phase epitaxial regrowth ofthe film. This work suggests the feasibility of combining ion implantationand furnace annealing to generate large-grain, uniformly orientedpolycrystal1ine films on amorphous substrates. It is a potentiallow-temperature silicon-on-insulator technology.

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References

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