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Modulation Doped GaAs with Electron Mobilities Exceeding 107cm2/V sec

Published online by Cambridge University Press:  28 February 2011

Loren Pfeiffer,
K. W. West,
H. L. Stormer and
K. W. Baldwin
Loren Pfeiffer
Affiliation:
AT&T Bell Laboratories, Inc. Murray Hill, N.J. 07974
K. W. West
Affiliation:
AT&T Bell Laboratories, Inc. Murray Hill, N.J. 07974
H. L. Stormer
Affiliation:
AT&T Bell Laboratories, Inc. Murray Hill, N.J. 07974
K. W. Baldwin
Affiliation:
AT&T Bell Laboratories, Inc. Murray Hill, N.J. 07974
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Abstract

A modulation doped Al.35Ga.65As/GaAs single interface structure using Si delta doping setback from the two dimensional electron gas (2 DEG) by 700Å, was measured in van der Pauw geometry at 0.35K and showed an electron mobility of 1.17× 107 cm2 /V see at a carrier density of 2.2× 1011electrons/cm2. An Al.30Ga.70As/GaAs single quantum-well 250Å wide of similar structure with a 500Å setback yielded a 2 DEG mobility of 5.1× 106 cm2 /Vsec at 3.0×1011 electrons/cm2under similar measurement conditions. These mobilities exceed those previously published by more than a factor of two for the single interface structure, and by nearly an order of magnitude for the quantum-well. The samples were grown by solid source MBE in a Varian Gen II modified with He closed-cycle cryogenic vacuum pumping, and in other ways, to achieve a base pressure of 1.5× 10−12 torr, as measured on a extractor-type ionization gauge that is not subject to the usual x-ray limited reading.

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