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Modulation Doped Si/SiGe Heterostructures

Published online by Cambridge University Press:  22 February 2011

F. Schäffler and
Daimler-Benz AG
F. Schäffler
Affiliation:
Forschungsinstitut Ulm, D-7900 Ulm, FRG
Daimler-Benz AG
Affiliation:
Forschungsinstitut Ulm, D-7900 Ulm, FRG
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Abstract

An overview of SiGe-based, modulation doped heterostructures is given. Strained layer handling, a prerequisite for realizing both n- and p-type devices, Is treated in terms of band engineering. The main emphasis is put on recent results obtained with high-electron mobility n-type Si/SiGe structures. Hall, Shubnikov-deHaas, and cyclotron resonance measurements are presented. The thermal stability of the heterostructures and the dopant distribution are treated with respect to device applications. Room temperature and 77K dc-measurements on very recent modulation doped field effect transistor (MODFET) implementations using implanted source/drain contacts are discussed. Device concepts with n- and p-type MODFETs combined in a superior complementary layout (CMODFET) are proposed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991, 433
Copyright
Copyright © Materials Research Society 1991

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References

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