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Molecular Hydrogen Adsorption onto the Si(111) 7 × 7 Surface

Published online by Cambridge University Press:  28 February 2011

S. H. Wolff,
S. Wagner,
D. Loretto and
J. M. Gibson
S. H. Wolff
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton, NJ 08544
D. Loretto
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We have studied the adsorption of molecular hydrogen onto the Si(111) 7 × 7 surface using UHV TEM at temperatures between room temperature and 780'C. We demonstrated that molecular hydrogen at 4 × 10−6 Torr dissociatively chemisorbed onto the Si(l11) surface at elevated temperatures and the stable hydrogenated Si(l11) surface is shown to be a strong function of temperature.

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