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Morphological Evolution in Highly Strained InSb/InAs(001)

Published online by Cambridge University Press:  10 February 2011

Aruna Seshadri and
J. Mirecki Millunchick
Aruna Seshadri
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor MI
J. Mirecki Millunchick
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor MI
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Abstract

We investigated the morphological evolution of InSb grown on InAs (001) substrates (lattice mismatch = 6.9%) as a function of film thickness. Due to the very large lattice mismatch, growth proceeded via the Volmer-Weber mode. The morphological evolution of highly strained InSb films proceeds through several regimes as a function of thickness. The films initially nucleate isolated 3D islands even in the earliest stages of growth. The islands then coarsen and coalesce at slightly higher thicknesses, with some evidence of cooperative nucleation, or the sequential nucleation of islands and pits. Once the islands coalesce, the morphology evolves into long ridges aligned along the [110], however, those films are still discontinuous. At a thickness =100nm, the films finally become completely continuous and 2D growth proceeds via step flow of growth spirals present on the surface.

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References

REFERENCES

1 Konkar, A., Madhukar, A., Chen, P., Applied Physics Letters 72, 220 (1998)Google Scholar
2 Mirecki-Millunchick, J., Twesten, R. D., Lee, S. R., Follstaedt, D. M., Jones, E. D, Ahrenkiel, S. P., Zhang, Y., Cheong, H. M., Mascarenhas, A., MRS Bulletin 22, 38 (1997)Google Scholar
3 9. Cullis, A. G., Pidduck, A. J., Emeny, M. T., Journal of Crystal Growth 158, 15 (1996)Google Scholar
4 Bennett, B. R., Shanabrook, B. V., Thibado, P. M., Whitman, L. J., Magno, R., Journal of Crystal Growth 175/176, 888 (1997)Google Scholar
5 Bennett, B. R., Magno, R., Shanabrook, B. V., Applied Physics Letters 68, 505 (1996)Google Scholar
6 Kang, J. M., Nouaoura, M., Lassabatere, L., Rocher, A., Journal of Crystal Growth 143, 115 (1994)Google Scholar
7 Qian, W., Skowronski, M., Kaspi, R., DeGraef, M., Dravid, V. P., Journal of Applied Physics 81, 7268 (1997)Google Scholar
8 Shitara, T., Vvendensky, D. D., Neave, J. H., Joyce, B. A., Mat. Res. Soc. Proc. 312, 267 (1993)Google Scholar
9 Cullis, A. G., Robbins, D. J., Pidduck, A. J., Smith, P. W., Journal of Crystal Growth 123, 333 (1992)Google Scholar
10 Jesson, D. E., Chen, K. M., Pennycook, S. J., Thundat, T., Warmack, R. J., Physcial Review Letters 77, 1330 (1996)Google Scholar
11 Chokshi, N., Millunchick, J. Mirecki, Applied Physics Letters, (in press)Google Scholar
12 Kim, J.H., Seong, T.Y., Mason, N.J., Walker, P.J., Journal of Electronic Materials 27, 466 (1998)Google Scholar