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Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

Published online by Cambridge University Press:  21 February 2011

J. L. Batstone
J. L. Batstone*
Affiliation:
IBM Corporation, T.J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598
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Abstract

Motion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.

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