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Multijunction InGaAs Thermophotovoltaic Devices

Published online by Cambridge University Press:  10 February 2011

Navid S. Fatemi,
David M. Wilt,
Phillip P. Jenkins,
Victor G. Weizer and
Christopher S. Murray
Navid S. Fatemi
Affiliation:
Essential Research, Inc., Cleveland, OH
David M. Wilt
Affiliation:
NASA Lewis Research Center, Celveland, OH
Phillip P. Jenkins
Affiliation:
Essential Research, Inc., Cleveland, OH
Victor G. Weizer
Affiliation:
Essential Research, Inc., Cleveland, OH
Christopher S. Murray
Affiliation:
Westinghouse Electric Corporation, West Mifflin, PA
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Abstract

A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the radiator for recuperation, thereby providing for high system efficiencies. MIMs were fabricated with an active area of 0.9×l cm, and with 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were fabricated, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74 eV MIMs demonstrated an open-circuit voltage (Voc) of 6.16 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 0.84 A/cm2, under flashlamp testing. The 0.55 eV MIMs demonstrated a Voc of 4.85 V and a fill factor of 57.87percnt; at a Jsc of 3.87 A/cm2 Electrical performance results for these MIMs are presented.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997, 223
Copyright
Copyright © Materials Research Society 1998

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References

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