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Multilayer AlxGa1−xAs Heterostructures for Second-Harmonic Generation

Published online by Cambridge University Press:  25 February 2011

S. Janz,
F. Chatenoud,
H. Dai,
E. Vilks,
M. Buchanan,
R. Normandin and
A. J. Springthorpe
S. Janz
Affiliation:
Institute for Microstructural Sciences and Solid State Optoelectronics Consortium, National Research Council, Montreal Rd., Ottawa, Canada, K1A 0R6.
F. Chatenoud
Affiliation:
Institute for Microstructural Sciences and Solid State Optoelectronics Consortium, National Research Council, Montreal Rd., Ottawa, Canada, K1A 0R6.
H. Dai
Affiliation:
Institute for Microstructural Sciences and Solid State Optoelectronics Consortium, National Research Council, Montreal Rd., Ottawa, Canada, K1A 0R6.
E. Vilks
Affiliation:
Institute for Microstructural Sciences and Solid State Optoelectronics Consortium, National Research Council, Montreal Rd., Ottawa, Canada, K1A 0R6.
M. Buchanan
Affiliation:
Institute for Microstructural Sciences and Solid State Optoelectronics Consortium, National Research Council, Montreal Rd., Ottawa, Canada, K1A 0R6.
R. Normandin
Affiliation:
Institute for Microstructural Sciences and Solid State Optoelectronics Consortium, National Research Council, Montreal Rd., Ottawa, Canada, K1A 0R6.
A. J. Springthorpe
Affiliation:
Bell-Northern Research, P.O. Box 3511, Station C, Ottawa, Canada, KlY 4H7.
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Abstract

Quasi-phase matching in AlxGa1−xAs heterostructure optical waveguides can be used for efficient second-harmonic (SH) generation. The efficiency of these devices depends on the linear and nonlinear optical properties of the component materials. We present measurements of the SH susceptibility variation in AlxGa1−xAs with Al concentration, for fundamental light at λ = 1.06 μ. The measured SH susceptibility decreases by an order of magnitude as the Al concentration is varied from x = 0 to x = 0.97. These measurements are used to evaluate the SH generation efficiency of AlxGa1−xAs heterostructures as the structural and material parameters are varied.

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References

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