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Multilayered Interconnections for VLSI

Published online by Cambridge University Press:  25 February 2011

Donald S. Gardner and
Krishna Saraswat
Donald S. Gardner
Affiliation:
Integrated Circuits Laboratory Stanford University, Stanford, Calif. 94305
Krishna Saraswat
Affiliation:
Integrated Circuits Laboratory Stanford University, Stanford, Calif. 94305
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Abstract

Interconnections are predicted to become the limit in performance and reliability at submicron dimensions. Layered structures are one possible solution to the problems of electromigration and hillocks. Aluminum alloys can improve the properties of pure aluminum but with a consistent increase in resistivity due to lattice distortions introduced by the alloy in solid solution. The rise in resistivity is minimal in layered films because aluminum layers act as parallel conductors. Titanium is the most effective refractory metal for eliminating hillocks in layered films; however vanadium, tantalum, and tungsten also reduce hillocks to a manageable level although high resistivity, the inability to dry etch, or lateral hillocks can become a problem. Layered films of aluminum with TiSi2 encounter problems with hillocks. These differences are partially explained by the increased strength of the aluminide TiA13 that forms compared to the other compounds. Barrier metals are needed for aluminum layered with refractory metals because of the formation of ternary compounds, and several metals have proven to be satisfactory. Such barriers, however, are required for even aluminum at submicron dimensions for stable low-resistivity contacts.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987, 343
Copyright
Copyright © Materials Research Society 1988

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References

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