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Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope

Published online by Cambridge University Press:  21 March 2011

Minoru Tachiki,
Tohru Fukuda,
Hokuto Seo,
Kenta Sugata,
Tokishige Banno,
Hitoshi Umezawa and
Hiroshi Kawarada
Minoru Tachiki
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan, E-mail: tachiki@mn.waseda.ac.jp
Tohru Fukuda
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan, E-mail: tachiki@mn.waseda.ac.jp
Hokuto Seo
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan, E-mail: tachiki@mn.waseda.ac.jp
Kenta Sugata
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan, E-mail: tachiki@mn.waseda.ac.jp
Tokishige Banno
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan, E-mail: tachiki@mn.waseda.ac.jp
Hitoshi Umezawa
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan, E-mail: tachiki@mn.waseda.ac.jp
Hiroshi Kawarada
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan, E-mail: tachiki@mn.waseda.ac.jp
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Abstract

Nanofabrication on a hydrogen-terminated diamond surface is performed usingan atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm aresuccessfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed ofone side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).

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References

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