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Nano-Tubes in GaN

Published online by Cambridge University Press:  10 February 2011

Z. Liliental-Weber,
Y. Chen,
S. Ruvimov,
W. Swider and
J. Washburn
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory 62/203, Berkeley, CA 94720
Y. Chen
Affiliation:
Hewlett Packard, Palo Alto, CA
S. Ruvimov
Affiliation:
Lawrence Berkeley National Laboratory 62/203, Berkeley, CA 94720
W. Swider
Affiliation:
Lawrence Berkeley National Laboratory 62/203, Berkeley, CA 94720
J. Washburn
Affiliation:
Lawrence Berkeley National Laboratory 62/203, Berkeley, CA 94720
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Abstract

Formation of vertical hollow nano-tubes in GaN grown on different substrates using different growth methods is described. These defects are shown to be of several different types, some related to threading dislocations, but others originating at tubular inversion domains, or crystal inhomogeneities. Kinetic mechanism based on slow growth rate on polar {0111} surfaces is proposed to explain the origin of these defects.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996, 417
Copyright
Copyright © Materials Research Society 1997

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References

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