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Native Defects and their Interactions with Impurities in Silicon

Published online by Cambridge University Press:  15 February 2011

G. D. Watkins
G. D. Watkins*
Affiliation:
Department of Physics, Lehigh University, Bethlehem, PA 18015, gdwO@lehigh.edu
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Abstract

A review is given of what has been learned from EPR studies over the last ∼35 years concerning vacancies and interstitials in silicon. Lattice vacancies are well understood, their diffusional migration energies determined vs charge state and electronic excitation, and their interactions with most of the common impurities established. The isolated interstitial has not been observed by EPR but a great deal has been learned concerning it from studies of its interactions with impurities, and more recently from theory. The properties of these two intrinsic defects and their progeny will be analyzed to help clarify their role in both the normal thermally activated diffusion processes and the transient-enhanced ones, which are of particular current concern.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997, 139
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

For a more complete description of the properties to be described here of the vacancies and interstitials and their interactions with impurities, with proper references to the literature, see references 2 and 3, below. No attempt will be made therefore to supply detailed literature references here, except as needed to supplement those contained therein.Google Scholar
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