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Negative-Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Junzo Ishikawa
Junzo Ishikawa*
Affiliation:
Department of Electronics, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-01, Japan
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Abstract

Negative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

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References

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